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Introducing the latest technologies being researched and developed at KIOXIA Corporation and various use cases of flash memories.
BiCS FLASH™ can increase its memory density and reduce the product cost by increasing the number of word line (WL) layers. The thyristor structure is one of the promising candidates to obtain a large read current even the number of stacked layers is increased.
By applying MILC(Metal-induced Lateral Crystallization) technology to Si film in the vertical memory holes, we successfully fabricated the formation of monocrystalline Si from amorphous Si via nickel silicide.
The 3D flash memory cell devices equipped with this technology demonstrated superior electrical characteristics and reduced variation compared to conventional devices using poly-Si as the channel.
Three-dimensional (3D) semicircular split-gate flash memory cells have been successfully developed for the first time.
BiCS FLASH™ 3D flash memories, electrode and dielectric layers are alternately stacked all at once, and then holes are punched through all the layers at once, to reduce the number of manufacturing processes. For these manufacturing processes, plasma etching (RIE: Reactive Ion Etching) technology is crucial in order to form deep memory holes with a uniform diameter.
To meet the demand for ever-smaller, higher-capacity storage devices, it is essential to increase the storage density of flash memories. For two-dimensional (2D) NAND flash memories, we have employed nanofabrication and other technologies to develop a 15-nm memory cell, realizing such flash memories. However, geometry scaling is approaching the physical limit. BiCS FLASH™ overcomes the density limit through multilayer cell array stacking.
Conducts advanced research and development, application system development, and development prototyping in the field of memory including emerging memory
Conducts R&D on BiCS FLASH™, a type of 3D flash memory that KIOXIA was the first to develop in the world, while serving as a bridge between R&D and volume production.