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As a leading company in flash memory and SSD, KIOXIA delivers products that create new value. Research and development into cutting-edge technologies in many diverse fields is essential for realizing this. We implement technological innovation to pursue the potential of “memory.”
December 06, 2023 KIOXIA Updates
December 05, 2023 KIOXIA Announcements
November 30, 2023 KIOXIA Updates
Kioxia’s Research and Technology Development
Chief Technology Officer, Hideshi Miyajima
Kioxia conceived and developed the world’s first NAND flash memory and 3D flash memory BiCS FLASH™, and we remain committed to promoting research and development in the future in order to realize our mission of “Uplifting the world with memory.”
KIOXIA has developed many “world-first” technologies, such as NAND flash memory and created innovation. As a leading company in “memory,” KIOXIA will continue to work on cutting-edge research and development to create innovation.
The Shining Sun and the Flash Memory for Storage
~ Principle of 3D Flash Memory Operation ~
The principle of 3D flash memory operation is explained with CG animation by contrasting it to the way the sun shines.
Technology and Innovation at KIOXIA
As a leading company in flash memory and SSD, KIOXIA conducts research and technology development that supports the information society.
Introducing the relationship between KIOXIA's technology and society, and the "technology" of flash memory, which is the basis of our technology.
Innovations Created by KIOXIA
In 2007, KIOXIA was the first in the world to announce 3D flash memory technology. Here we present the key points of innovation that led to cost reductions and the initiatives for higher capacities, together with an explanation of BiCS FLASH™.
KIOXIA invented the world’s first NAND flash memory in 1987. This is an explanation of the structure of flash memory and the mechanism of data storage.
“Multi-level cell technology” is one of the main technologies realizing larger capacity flash memory. The 1 Gbit MLC NAND flash memory launched by KIOXIA in 2001 was the first application in the world of multi-level cell technology to a NAND flash memory product.
Introducing latest technologies being researched and developed at KIOXIA Corporation and various use cases of flash memories.
We have studied with Mie University to improve the accuracy of wafer map(data representation showing which chips on a wafer are defective) classification, which is used to investigate the causes of defects in the semiconductor manufacturing process. The method devised in this joint research was presented at the AEC/APC Symposium Asia 2023.
November 30, 2023 KIOXIA Machine learning Institute of Memory Technology R&D (System Technology)
We developed the accessible frameworks for developing and evaluating retrieval-augmented large language models.
November 29, 2023 KIOXIA Emerging memory Institute of Memory Technology R&D (Device Technology)
Spin orbit torque(SOT) driven magnetization switching has recently attracted attention towards next generation magnetic memory. In this report, we newly introduced a canted bias magnetic field and clarified that it makes the SOT driven perpendicular magnetization switching faster and more stable. This was presented at International Conference on Solid State Devices and Materials in 2023(SSDM2023).
KIOXIA's R&D Backgrounds
KIOXIA covers from R&D to mass production of flash memory and SSD products. Introducing the mechanisms of technological innovation, that is, how R&D is conducted in the process of bringing our products to market.
Introducing KIOXIA’s achievements in supporting the evolution of electric devices, such as the invention of NAND flash memory in 1987, and advancement of the information society on a global scale, seen through the lens of the history of memory and SSD development.
KIOXIA has been highly commended for the presentation of its R&D through a variety of channels, including major academic societies and research papers.
Does memory have emotions? “Human power” is the key to expanding the possibilities of the future at the vanguard of R&D.
Where is memory technology from, and where is it headed? A look back at the history of flash memory innovation.
R&D Organization/Academic Collaboration
KIOXIA has established industry-leading R&D frameworks with “memory” technology. We use our various locations to conduct technological innovation while promoting open innovation.
To further accelerate the development speed and address the needs of increasingly diverse research themes, KIOXIA promotes R&D projects in collaboration with universities, technical communities, and research institutes both in Japan and abroad.
Interviews and Columns
This page presents videos of interviews with the "Fellows" who are the power behind the memory research and technology development at KIOXIA. These professionals are masters of devices and processes, memory systems, TCAD simulations and flash memory development. They talk about the pleasure of research and technology development and about KIOXIA's contribution to the world ten years from now.