Please select your location and preferred language where available.
As a leading company in flash memory and SSD, KIOXIA delivers products that create new value. Research and development into cutting-edge technologies in many diverse fields is essential for realizing this. We implement technological innovation to pursue the potential of “memory.”
News
-
October 04, 2023 KIOXIA Updates
-
September 20, 2023 KIOXIA Updates
-
September 06, 2023 KIOXIA Updates
Kioxia's Research and Technology Development
Chief Technology Officer, Hideshi Miyajima
Kioxia conceived and developed the world’s first NAND flash memory and 3D flash memory BiCS FLASH™, and we remain committed to promoting research and development in the future in order to realize our mission of “Uplifting the world with memory.”
KIOXIA has developed many “world-first” technologies, such as NAND flash memory and created innovation. As a leading company in “memory,” KIOXIA will continue to work on cutting-edge research and development to create innovation.
This page presents videos of interviews with the "Fellows" who are the power behind the memory research and technology development at KIOXIA. These professionals are masters of devices and processes, memory systems, TCAD simulations and flash memory development. They talk about the pleasure of research and technology development and about KIOXIA's contribution to the world ten years from now.
Technology and Innovation at KIOXIA
As a leading company in flash memory and SSD, KIOXIA conducts research and technology development that supports the information society.
Introducing the relationship between KIOXIA's technology and society, and the "technology" of flash memory, which is the basis of our technology.
Innovations Created by KIOXIA
In 2007, KIOXIA was the first in the world to announce 3D flash memory technology. Here we present the key points of innovation that led to cost reductions and the initiatives for higher capacities, together with an explanation of BiCS FLASH™.
KIOXIA invented the world’s first NAND flash memory in 1987. This is an explanation of the structure of flash memory and the mechanism of data storage.
“Multi-level cell technology” is one of the main technologies realizing larger capacity flash memory. The 1 Gbit MLC NAND flash memory launched by KIOXIA in 2001 was the first application in the world of multi-level cell technology to a NAND flash memory product.
Technology Topics
Introducing latest technologies being researched and developed at KIOXIA Corporation and various use cases of flash memories.
-
The crystallization technology for Si channel, using metal-assisted materials, has been developed for 3D (three-dimensional) flash memory. It has successfully achieved cell array operation for the first time. This approach can reduce the density of grain boundaries in the Si channel, leading to reduction in trap density in Si channel compared to conventional polycrystalline Si channel. As a result, this technology can realize lower channel resistance, smaller RTN (random telegraphic noise) and narrower threshold voltage distribution in QLC (quadruple level cell) operation.
-
The erase operation of flash memory is one of the causes of performance degradation in SSDs. We have developed an efficient erase technology for low-latency flash memory-based SSDs and achieved a significant performance improvement in a database application evaluation.
-
We have developed a package that incorporates 3D flash memory and a boost circuit using a DC-DC converter. This technology can drastically reduce power consumption and operating temperatures, enabling the thermal throttling-less SSD even if the number of Word-line stacked layers reaches 1,000 in the future. This achievement was presented at the International Memory Workshop 2023.
KIOXIA covers from R&D to mass production of flash memory and SSD products. Introducing the mechanisms of technological innovation, that is, how R&D is conducted in the process of bringing our products to market.
Introducing KIOXIA’s achievements in supporting the evolution of electric devices, such as the invention of NAND flash memory in 1987, and advancement of the information society on a global scale, seen through the lens of the history of memory and SSD development.
KIOXIA has been highly commended for the presentation of its R&D through a variety of channels, including major academic societies and research papers.
R&D Organization/Academic Collaboration
KIOXIA has established industry-leading R&D frameworks with “memory” technology. We use our various locations to conduct technological innovation while promoting open innovation.
To further accelerate the development speed and address the needs of increasingly diverse research themes, KIOXIA promotes R&D projects in collaboration with universities, technical communities, and research institutes both in Japan and abroad.
