Awards and Research papers

KIOXIA has been highly commended for the presentation of its R&D through a variety of channels, including major academic societies and research papers.

Awards

06-14-2022

2021 VLSI Test of Time Award
“Bit Cost Scalable Technology with Punch and Plug Process for Ultra High DensityFlash Memory,”

06-09-2022

2021 IEICE Achievement Award
“Massively Parallel and Distributed Processing 3D Electromagnetic Field Analysis and Design Optimization Method Using Implicit Method in Limited Direction” Jointly awarded with Shizuoka University

02-23-2022

12-14-2021

IEEE Andrew S. Grove Award
"For pioneering and sustained contributions to high-density, three-dimensional flash memory."

11-12-2021

Local Commendation for Invention of Kanto
The Prize of the Chairman of HATSUMEI KYOKAI (Japan Institute of Invention and Innovation JIII)
“Optimizing the Number of Reads in Multi-level Flash Memory” (patent no 4892307)

11-04-2021

AEC/APC Syposium Asia 2021 Best Paper Award
"Application of Contrastive Representation Learning to Unsupervised Defect Classification in Semiconductor Manufacturing"

09-07-2021

2021 International Conference on Solid State Devices and Materials (SSDM2021)
Young researcher Award “Marina Yamaguchi”

06-22-2021

06-16-2021

2020 VLSI Test of Time Award
"A NAND Structured Cell with a New Programming Technology for Highly Reliable 5 V-only Flash EEPROM,"

06-16-2021

2020 VLSI Test of Time Award
"A Quick Intelligent Program Architecture for 3 V-only NAND-EEPROMs,"

05-25-2021

04-09-2021

IEEE EDTM2021 Best Paper Award
”Cryogenic Operation of 3D Flash Memory for New Applications and Bit Cost Scaling with 6-Bit per Cell (HLC) and Beyond”

04-06-2021

The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology :
Prize for Science and Technology, Science and Technology Promotion Category “Development of high-speed and high-efficiency wireless LAN technology” Jointly awarded with Toshiba Corporation

09-24-2020

JIII 2020 National Commendation for Invention "Imperial Invention Prize"
"High Density 3D Flash Memory Device and Manufacturing Method Thereof" (patent no. 5016832).

03-13-2020

18th JSAP Plasma Electronics Award

03-12-2020

APEX/JJAP Editorial Contribution Award from The Japan Society of Applied Physics

11-27-2019

The Sort Benchmark committee JouleSort World Record *1

11-19-2019

NANOTS2019 Best Interested Paper Award, Young Researcher's Encouragement Award

11-13-2019

AEC/APC Symposium Asia 2019 Best Paper Award
"Robust Estimation of Mixed-Type Wafer Map Similarity Utilizing Non-negative Matrix Factorization"

11-05-2019

A-SSCC Outstanding Contribution Award

09-18-2019

The 13th (2019) JSAP Fellow Award

03-10-2019

17th JSAP Plasma Electronics Award

03-09-2019

JSAP Young Scientist Presentation Award

02-19-2019

IEEE SSCS Japan Industry Contribution Award

01-17-2019

20th JSPS Plasma Science for Materials Award

  1. As of Nov. 27, 2019 (1TB Sort/89kJoules)

11-13-2018

DPS2018 Nishizawa Award

10-27-2018

Special Jury Award of the 2018 Incentive Award to Young Woman Engineer from Japan Women Engineers Forum (JWEF)

09-18-2018

The 12th (2018) JSAP Fellow Award

09-11-2018

Connect Products and Services category in the field of Business Impact of the 6th Cloudera Data Impact Awards

06-06-2018

Award for Excellence of the 24th Semiconductor of the Year 2018 in the field of semiconductor devices from Electronic Device Industry News

11-22-2017

IWDTF Young Award

11-16-2017

DPS2017 DPS Paper Award

11-10-2017

NANOTS2017 Best Interested Paper Award

08-04-2017

70th (2016): Technological Development Encouragement Prize from the Motion Picture and Television Engineering Society of Japan, Inc.

06-26-2017

Gold Prize of the 2016 Field Innovation Award from the Japanese Society for Artificial Intelligence (JSAI)

04-28-2017

Technical Development Prize (Progress & Development Prize) in the field of R&D of the 44th (2016) Technology Development Award from the Institute of Image Information and Television Engineers

03-24-2017

63rd (2016) Okochi Memorial Prize from the Okochi Memorial Foundation

02-14-2017

The Minister of Economy, Trade and Industry Prize of the 5th Management of Technology (MOT) & Innovation Award from Japan Techno-Economics Society (JATES)

Company names, product names, and service names mentioned herein may be trademarks of respective companies.

Research papers (Conference Presentation and Publication List)

All authors at submission are basically our company's employees. Written in English.

Accurate Picture of Cycling Degradation in HfO2-FeFET Based on Charge Trapping Dynamics Revealed by Fast Charge Centroid Analysis
Author(s): R. Ichihara, et al.
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2021-December, pp. 130-133

History and Evolution of NAND Flash Memory (Plenary)
Author(s): Masaki Momodomi
Journal title/Conference name: 2021 International Conference on Solid State Devices and Materials (SSDM2021), B-5-01

Hafnia-based Ferroelectric Tunnel Junction for Emerging Applications (Invited)
Author(s): S. Fujii, et al.
Journal title/Conference name: 2021 International Conference on Solid State Devices and Materials (SSDM2021), B-5-01

Cryogenic Operation of 3-D Flash Memory for Storage Performance Improvement and Bit Cost Scaling
Author(s): T. Sanuki, et al.
Journal title/Conference name: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 7(2), pp. 159-167

Application of Contrastive Representation Learning to Unsupervised Defect Classification in Semiconductor Manufacturing
Author(s): S. Muzukami, et al.
Journal title/Conference name: AEC/APC Symposium Asia 2021, TDA-014

Distribution of trace impurities in microvolumes and analysis of concentration using laser sputtered neutral mass spectrometry
Author(s): H. Akutsu, et al.
Journal title/Conference name: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 39(6),064002

A noise-canceling charge pump for area efficient PLL design
Author(s): G. Urakawa, et al.
Journal title/Conference name: IEICE Transactions on Electronics, E104.C(10), pp. 625-634

Quantization Strategy for Pareto-optimally Low-cost and Accurate CNN
Author(s): K. Nakata, et al.
Journal title/Conference name: 2021 IEEE 3rd International Conference on Artificial Intelligence Circuits and Systems, AICAS 2021, 9458452

Advanced underlayer film to enhance the productivity of nanoimprint lithography
Author(s): K.Okabe, et al.
Journal title/Conference name: Journal of Micro/Nanopatterning, Materials, and Metrology 21(1), 011006

Current Status and Issues of In-memory Accelerators for Deep Neural Networks
Author(s): J. Deguchi
Journal title/Conference name: 2021 International Symposium on VLSI Design, Automation and Test (VLSI-DAT) (Invited)

Approaching DRAM performance by using microsecond-latency flash memory for small-sized random read accesses: a new access method and its graph applications
Author(s): T. Suzuki, et al.
Journal title/Conference name: Proceedings of the VLDB Endowment, 14(8), pp. 1311 – 1324

Metal diffusion model in polymer matrices in vapor phase infiltration
Author(s): N. Sasao, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 60,SCCC04

Applications of AI Technologies in Flash Memory Business
Author(s): R. Orihara
Journal title/Conference name: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, 9421020

Cryogenic Operation of 3D Flash Memory for New Applications and Bit Cost Scaling with 6-Bit per Cell (HLC) and beyond
Author(s): Y Aiba, et al.
Journal title/Conference name: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, 9421051

Challenges of Flash Memory for Next Decade (Invited)
Author(s): K. Ishimaru
Journal title/Conference name: IEEE International Reliability Physics Symposium Proceedings, 2021-March,9405182

In-line schematic failure analysis technique by defect SEM images
Author(s): J. Okude, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 11611,116110M

Measurability analysis of the HAR structure in 3D memory by T-SAXS simulation
Author(s): K. Sasaki, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 11611,116110U

Preventing method of volume expansion of polymer after metal infiltration
Author(s): N. Sasao, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 11612,1161209

Multi-field imprint technology: Enabling the productivity enhancement of NIL
Author(s): T. Nakasugi, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 11610,1161008

Quality-Oriented Statistical Process Control Utilizing Bayesian Modeling
Author(s): K. Date, et al.
Journal title/Conference name: IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, 2020-December,9377496

HfO2-based FeFET and FTJ for ferroelectric-memory centric 3D LSI towards low-power and high-density storage and AI applications (Invited)
Author(s): M. Saitoh, et al.
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2020-December,9372106, pp. 18.1.1-18.1.4

Design principle of channel material for oxide-semiconductor field-effect transistor with high thermal stability and high on-current by fluorine doping
Author(s): H. Kawai, et al.
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2020-December,9372121, pp. 22.2.1-22.2.4

Surrounding Gate Vertical-Channel FET with a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Author(s): H. Fujiwara, et al.
Journal title/Conference name: IEEE Transactions on Electron Devices, 67(12),9199412, pp. 5329-5335

An Effective Learning Scheme for Weighted-BP with Parallel Permutation Decoding
Author(s): R. Yoshizawa, et al.
Journal title/Conference name: Proceedings of 2020 International Symposium on Information Theory and its Applications, ISITA 2020, 9366111, pp. 86-90

A Noise-Canceling Charge Pump for Area Efficient PLL Design
Author(s): G. Urakawa, et al.
Journal title/Conference name: 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, 9226191, pp. 31-33

4-port 10 MHz-67 GHz Broadband Measurement of FR-4 PCB Transmission Lines for 64-Gb/s PAM-4 Signaling
Author(s): Y. Tsubouchi, et al.
Journal title/Conference name: 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, 9226185, pp. 7-9

Empowering Next-Generation Applications through FLASH Innovation (Plenary)
Author(s): S. J. Ohshima
Journal title/Conference name: Digest of Technical Papers - Symposium on VLSI Technology, 2020-June,9265031

Impact of Zr Concentration on Time-Dependent Dielectric Breakdown of HfZrO-based Ferroelectric Tunnel Junction (FTJ) Memory
Author(s): M. Yamaguchi, et al.
Journal title/Conference name: 2020 International Conference on Solid State Devices and Materials (SSDM2020), B-2-01

New Material Approach to Enhance Spontaneous Polarization in Ferroelectric HfO2
Author(s): K. Takahash, et al.
Journal title/Conference name: 2020 International Conference on Solid State Devices and Materials (SSDM2020), B-2-03

Suppression of Channel Shortening and Reduction of S/D Parasitic Resistance in InGaZnO channel BEOL Transistor by Insertion of thermally stable InAlZnO Contact Layer
Author(s): Y. Sato, et al.
Journal title/Conference name: 2020 International Conference on Solid State Devices and Materials (SSDM2020), J-6-02

Improved state stability of HfO2 ferroelectric tunnel junction by template-induced crystallization and remote scavenging for efficient in-memory reinforcement learning
Author(s): S. Fujii, et al.
Journal title/Conference name: Digest of Technical Papers - Symposium on VLSI Technology, 2020-June,9265031

Re-examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation
Author(s): R. Ichihara, et al.
Journal title/Conference name: Digest of Technical Papers - Symposium on VLSI Technology, 2020-June,9265055

Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm Using BEOL Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Author(s): H. Fujiwara, et al.
Journal title/Conference name: Digest of Technical Papers - Symposium on VLSI Technology, 2020-June,9265109

Combination of Transistors' compact model and Big Data for successful Smart Factory
Author(s): S. Yoshitomi.
Journal title/Conference name: 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 – Proceedings, 9262981

Polymer Designs for Dense Metal Infiltration for Higher Dry-etch Resistance
Author(s): N. Sasao, et. al.
Journal title/Conference name: Japanese Journal of Applied Physics 59(SI),SIIC02

Template development for sub15nm nanoimprint lithography
Author(s): R. Seki, et al.
Journal title/Conference name: Proc. SPIE. 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology; 111780S (2020)

A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory
Author(s): N. Kariya, et al.
Journal title/Conference name: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Weight compression MAC accelerator for effective inference of deep learning
Author(s): A. Maki, et al.
Journal title/Conference name: IEICE Transactions on Electronics, E103C(10), pp. 514-523

Experimental Extraction of Impact of Depletion Capacitance on Low Frequency Noise in Sub-Micron nMOSFETs with Reverse Body Bias
Author(s): C. Tanaka, et al.
Journal title/Conference name: IEEE Transactions on Semiconductor Manufacturing, 33(2),9050647, pp. 146-149

Novel Statistical Modeling and Parameter Extraction Methodology of Cutoff Frequency for RF-MOSFETs
Author(s): C. Tanaka, et al.
Journal title/Conference name: IEEE International Conference on Microelectronic Test Structures, 2020-May,9107914

Thyristor Operation for High Speed Read/Program Performance in 3D Flash Memory with Highly Stacked WL-Layers
Author(s): H. Horii, et al.
Journal title/Conference name: 2020 IEEE International Memory Workshop, IMW 2020 – Proceedings, 9108147

Emerging Usage and Evaluation of Low Latency FLASH
Author(s): T. Shiozawa, et al.
Journal title/Conference name: 2020 IEEE International Memory Workshop, IMW 2020 – Proceedings, 9108145

Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning
Author(s): M. Yamaguchi, et al.
Journal title/Conference name: IEEE International Reliability Physics Symposium Proceedings, 2020-April, 9129314

Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation
Author(s): H. Seki, et al.
Journal title/Conference name: IEEE International Reliability Physics Symposium Proceedings, 2020-April,9128224

Experimental Extraction of Impact of Depletion Capacitance on Low Frequency Noise in Sub-Micron nMOSFETs with Reverse Body Bias
Author(s): C. Tanaka, et al.
Journal title/Conference name: IEEE Transactions on Semiconductor Manufacturing, 33(2),9050647, pp. 146-149

Ab initio calculation of interlayer exchange coupling in Co-based synthetic antiferromagnet with alloy spacer
Author(s): R. Takashima, et al.
Journal title/Conference name: AIP Advances, 10(1),015324

Process technologies leading a future of semiconductor memory (KIOKU) devices (Plenary)
Author(s): K. Hashimoto
Journal title/Conference name: SPIE advanced lithography 2020, Technical Program pp.6-7, 11323-501

Formation of High Reliability Hydrogen-free MONOS Cells Using Deuterated Ammonia
Author(s): M. Noguchi, et al.
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2019-December,8993586

Can in-memory/analog accelerators be a silver bullet for energy-efficient inference?
Author(s): J. Deguchi, et al.
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2019-December,8993500

Future of Non-Volatile Memory -From Storage to Computing- (Plenary)
Author(s): K. Ishimaru
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2019-December,8993609

High-Efficient Adaptive Modulation for PWM-Based Multi-Level Perpendicular Magnetic Recording on Insufficient Resolution Channel
Author(s): K. Harada
Journal title/Conference name: IEEE Transactions on Magnetics, 55(11),8784414

Multi-Level Modulation for High-Speed Wireless and Wireline Transceivers
Author(s): R. Fujimoto
Journal title/Conference name: 2019 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2019 – Proceedings, 8929137

A perspective on NVRAM technology for future computing system
Author(s): K. Hoya, et al.
Journal title/Conference name: 2019 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2019, 8741675

Novel cleaning technology for nanoparticle removal
Author(s): M. Tanabe, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 11148,111480N

Capability of DUV inspection for the LWR improved EUV mask of sub-15 nm hp on wafer
Author(s): M. Naka, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 11148,111480X

Low Operation Current Cell Technology for Terabit-Scale Memory Applications (Invited)
Author(s): M. Saitoh, et al.
Journal title/Conference name: Non-Volatile Memory Technology Symposium 2019 (NVMTS2019), pp.98-99

Current-Induced Domain Wall Motion in Pd-based Multilayered Structures with Different Ferromagnetic Layer Composition
Author(s): M. Kado, et al.
Journal title/Conference name: 64th Annual Conference on Magnetism and Magnetic Materials (MMM2019), HB-03

Robust Estimation of Mixed Type Wafer Map Similarity Utilizing Non negative Matrix
Author(s): Y. Tanaka, et al
Journal title/Conference name: Proceedings of AEC/APC Symposium Asia 2019, TDA-022.

High Performance In-Zn-O FET with High On-current and Ultralow (<10-20 A/μm) Off-state Leakage Current for Si CMOS BEOL Application
Author(s): N. Saito, et al.
Journal title/Conference name: AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings 8830602

Random Telegraph Noise after Hot Carrier Injection in Tri-gate Nanowire Transistor
Author(s): K. Ota, et al.
Journal title/Conference name: 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, 8731025, pp. 169-171

Multi-criteria hotspot detection using pattern classification
Author(s): K. Shiozawa, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 10962,109620T

Lithography hotspot candidate detection using coherence map
Author(s): T. Matsunawa, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 10962,109620Q

Half-pitch 14nm direct patterning with nanoimprint lithography
Author(s): T. Kono, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 10958,109580H

Tungsten/In-Sn-O stacked source/drain electrode structure of In-Ga-Zn-O thin-film transistor for low-contact resistance and suppressing channel shortening effect
Author(s): J. Kataoka, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 58(SB),SBBJ03

Next Generation Memory System in Data-centric Computing
Author(s): M. Takahashi, et al.
Journal title/Conference name: 2019 International Conference on Solid State Devices and Materials (SSDM2019), H-5-01 (Invited)

ReRAM Opportunities for In-Memory Computing
Author(s): K. Ota
Journal title/Conference name: 2019 International Conference on Solid State Devices and Materials (SSDM2019), Short Course A-04

Advanced Plasma Etching for the State-of-the-Arts Memories
Author(s): H. Hayashi, et al.
Journal title/Conference name: 2019 International Conference on Solid State Devices and Materials (SSDM2019), Satellite Workshop SW-03

Experimental Extraction of Body Bias Dependence of Low Frequency Noise in sub-micron MOSFETs from Subthreshold to Moderate Inversion Regime
Author(s): C. Tanaka, et. al.
Journal title/Conference name: IEEE International Conference on Microelectronic Test Structures, ICMTS-2019, 8730953, pp. 162-165

Post Training Weight Compression with Distribution-based Filter-wise Quantization Step
Author(s): S. Sasaki, et al.
Journal title/Conference name: IEEE Symposium on Low-Power and High-Speed Chips and Systems, COOL CHIPS 2019 - Proceedings 8721356

Ag Ionic Memory Cell Technology for Terabit-Scale High-Density Application
Author(s): S. Fujii, et al.
Journal title/Conference name: IEEE Symposium on VLSI Technology, Digest of Technical Papers, pp. TT189-TT190

Overview in Three-Dimensionally Arrayed Flash Memory Technology
Author(s): R. Katsumata
Journal title/Conference name: IEEE Symposia on VLSI Technology and Circuits, Short Course 1

A 12.8-Gb/s Daisy Chain-Based Downlink I/F Employing Spectrally Compressed Multi-Band Multiplexing for High-Bandwidth, Large-Capacity Storage Systems
Author(s): Y. Tsubouchi, et al.
Journal title/Conference name: IEEE Journal of Solid-State Circuits, 54(4),8613011, pp. 1086-1095

Live demonstration: FPGA-based CNN accelerator with filter-wise-optimized bit precision
Author(s): K. Nakata, et al.
Journal title/Conference name: Proceedings - IEEE International Symposium on Circuits and Systems, 2019-May, 8702208

Circuit-size reduction for parallel chien search using minimal polynomial degree reduction
Author(s): N. Kokubun, et al.
Journal title/Conference name: Proceedings - IEEE International Symposium on Circuits and Systems, 2019-May, 8702075

Grain-boundary-limited carrier mobility in polycrystalline silicon with negative temperature dependence: Modeling carrier conduction through grain-boundary traps based on trap-assisted tunneling
Author(s): M. Hogyoku, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 58(SB), SBBA01

Comprehensive study of variability in poly-Si channel nanowire transistor
Author(s): K. Ota, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 58(SB), SBBA06

Evaluation of electron traps in SiNx by discharge current transient spectroscopy: Verification of validity by comparing with conventional DLTS
Author(s): H. Seki, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 58(SB), SBBK02

High mobility (>30 cm2 V-1 s-1) and low source/drain parasitic resistance In-Zn-O BEOL transistor with ultralow <10-20 A μm-1 off-state leakage current
Author(s): N. Saito, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 58(SB), SBBJ07

Investigation of Switching-Induced Local Defects in Oxide-Based CBRAM Using Expanded Analytical Model of TDDB
Author(s): R. Ichihara, et al.
Journal title/Conference name: IEEE Transactions on Electron Devices, 66(5), 8676360, pp. 2165-2171

A 25.6Gb/s Uplink-Downlink Interface Employing PAM-4-Based 4-Channel Multiplexing and Cascaded CDR Circuits in Ring Topology for High-Bandwidth and Large-Capacity Storage Systems
Author(s): T. Toi, et al.
Journal title/Conference name: Digest of Technical Papers - IEEE International Solid-State Circuits Conference, pp. 478 - 480

Device Challenges and Opportunities for ReRAM
Author(s): K. Ota
Journal title/Conference name: IEEE International Reliability Physics Symposium, IRPS 2019 - Tutorial

3D Flash Memory - Electrical and Physical Characterizations for Memory Cell Reliability -
Author(s): Y. Mitani
Journal title/Conference name: IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Tutorial

Improving thickness uniformity of sputter-deposited films by using magnet rotation speed control technique
Author(s): T. Miura, et al.
Journal title/Conference name: IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, 2018-December, 8651152

Fixed charge control of silylated surface for stiction-free drying with surface energy reduction process
Author(s): T. Koide, et al.
Journal title/Conference name: Solid State Phenomena, 282 SSP, pp. 168-174

Deep Learning in DFM Applications
Author(s): T. Matsunawa, et. al.
Journal title/Conference name: Proceedings Volume 10810, Photomask Technology 2018; 1081006

FPGA-Based CNN Processor with Filter-Wise-Optimized Bit Precision
Author(s): A. Maki, et al.
Journal title/Conference name: Proceedings of 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC2018) pp.47-50

Non-Volatile Memory for Data Age (Invited)
Author(s): K. Ishimaru
Journal title/Conference name: Proceedings of the International Conference on Solid-State and Integrated Technology 2018 (ICSICT-2018) pp. 1215-1218

Formation Mechanism of Sidewall Striation in High-Aspect-Ratio Hole Etching
Author(s): M. Omura, et al.
Journal title/Conference name: 40th International Symposium on Dry Process (DPS2018), H-2, pp. 293-294

Footprints of RF CMOS Compact Modeling Technology from Wireless Communication to IoT Applications
Author(s): S. Yoshitomi
Journal title/Conference name: Proceedings of 25th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2018, 8436911, pp. 22-28

Evaluation of Electron Traps in SiN by Discharging Current Transient Spectroscopy: Verification of Validity by Comparing with Conventional DLTS
Author(s): H. Seki, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.325-326

High mobility (>30 cm2/Vs) and Low S/D Parasitic Resistance In-Zn-O BEOL Transistor with Ultralow (<10-20 A/μm) Off Leakage Current
Author(s): N. Saito, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.573-574

Performance improvement by template-induced crystallization in ferroelectric HfO2 tunnel junction memory for cross-point high-density application
Author(s): S. Kabuyanagi, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.205-206

Effect of Tin and Gallium Composition on the Instability of Amorphous Indium-Gallium-Zinc-Tin-Oxide (IGZTO) Thin-Film Transistors under Positive Gate Bias
Author(s): D. Zhao, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.805-806 (Late News)

Grain-Boundary-Limited Polycrystalline-Silicon Mobility with Negative Temperature Dependence ~ Modeling of Carrier Conduction through Grain-Boundary Traps Based on Trap-Assisted Tunneling ~
Author(s): M. Hogyoku, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp. 825-826

Stacked Source/Drain Electrode Structure of InGaZnO Thin-Film-Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect
Author(s): J. Kataoka, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.1269-1270 (Late News)

Comprehensive Study of Variability in Poly-Si Channel Nanowire Transistor ~ Grain Boundary effect in Variability ~
Author(s): K. Ota, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.235-236 (Late News)

Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI (Invited)
Author(s): M. Saitoh, et al.
Journal title/Conference name: 48th European Solid-State Device Research Conference (ESSDERC) 2018, pp.138-141

Performance and Reliability of Ferroelectric HfO2 Tunnel Junction Memory (Invited)
Author(s): S. Fujii, et al.
Journal title/Conference name: 2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP2018)

Reliability of HfO2-based Ferroelectric Tunnel Junction Memory (Invited)
Author(s): M. Yamaguchi, et al.
Journal title/Conference name: Non-Volatile Memory Technology Symposium 2018 (NVMTS2018)

A 12.8 Gb/s Daisy Chain-Based Downlink I/F Employing Spectrally Compressed Multi-Band Multiplexing for High-Bandwidth and Large-Capacity Storage Systems
Author(s): Y. Tsubouchi, et al.
Journal title/Conference name: IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. 149-150

Suppression of channel shortening effect for InGaZnO Thin-Film-Transistor by In-Sn-O source/drain electrodes
Author(s): J. Kataoka, et al.
Journal title/Conference name: 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 8421427, pp. 175-177

Origin of High Mobility in InSnZnO MOSFETs
Author(s): N. Saito, et al.
Journal title/Conference name: 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 -Proceedings 8421530, pp. 172-174

3D Flash Memory for Data-Intensive Applications (Keynote)
Author(s): S. Inaba
Journal title/Conference name: 2018 IEEE 10th International Memory Workshop, IMW 2018 pp. 1-4

Comprehensive investigation on parameter extraction methodology for short channel amorphous-InGaZnO thin-film transistor
Author(s): C. Tanaka, et al.
Journal title/Conference name: IEEE International Conference on Microelectronic Test Structures 2018-March, pp. 23-26

Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching
Author(s): T. Ichikawa, et al.
Journal title/Conference name: Japanese Journal of Applied Physics 57(6), 06JC01

Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
Author(s): Y. Miyano, et al.
Journal title/Conference name: Japanese Journal of Applied Physics 57(6), 06JB03

Hot carrier degradation, TDDB, and 1/f noise in Poly-Si Tri-gate nanowire transistor
Author(s): Y. Yoshimura, et al.
Journal title/Conference name: IEEE International Reliability Physics Symposium Proceedings 2018-March, pp. 5A.61-5A.66

Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO2 interface
Author(s): H. Kawai, et al.
Journal title/Conference name: Journal of Applied Physics 123(16), 161425

Charge-based Neuromorphic Cell by InGaZnO Transistor and Implementation of Simple Scheme Spike-Timing-Dependent Plasticity
Author(s): C. Tanaka, et al.
Journal title/Conference name: Proceedings - IEEE International Symposium on Circuits and Systems 2018-May, 8350932

Hotspot detection based on surrounding optical feature
Author(s): Y. Abe, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 10588, 105880I

Updates of nanoimprint lithography for production and applications for next generation memory devices
Author(s): T. Higashiki
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 10584, 105840T

Origin of high mobility in InSnZnO MOSFETs
Author(s): N. Saito, et al.
Journal title/Conference name: IEEE Journal of the Electron Devices Society 6,8546783, pp. 1258-1262

Study of CO2 ashing for porous SiOCH film using 100 MHz/13.56 MHz dual frequency superimposed capacitive coupled plasma
Author(s): T. Imamura, et al.
Journal title/Conference name: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics 35(6), 062201

Development of an Energy-Saving Controller for Sub Apparatus
Author(s): T. Ozaki
Journal title/Conference name: IEEE Transactions on Semiconductor Manufacturing 30(4), 8057857, pp. 367-370

Metrology and inspection required for next generation lithography
Author(s): M. Asano, et al.
Journal title/Conference name: Japanese Journal of Applied Physics 56(6), 06GA01

Application of EB repair for nanoimprint lithography template
Author(s): A, Kumada, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 10454, 104540Q

Accurate lithography simulation model based on convolutional neural networks
Author(s): Y. Watanabe, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 10454, 104540I

DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm
Author(s): M. Naka, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 10451, 104510K

Multi-scale modeling for SiO2 plasma-enhanced atomic layer deposition at high-aspect-ratio hole patterns
Author(s): Y. Miyano, et al.
Journal title/Conference name: 39th International Symposium on Dry Process (DPS2017), B-3, pp. 19-20

Introducing KIOXIA’s achievements in supporting the evolution of electric devices, such as the invention of NAND flash memory in 1987, and advancement of the information society on a global scale, seen through the lens of the history of memory and SSD development.