Awards and Research papers

KIOXIA has been highly commended for the presentation of its R&D through a variety of channels, including major academic societies and research papers.

Awards

11-29-2023

Local Commendation for Invention of Kanto 
The Invention Encouragement Award of HATSUMEI KYOKAI (Japan Institute of Invention and Innovation JIII)
“Optimization of voltage for three-dimensional flash memory”  (patent no 5193796)

09-19-2023

JSAP Young Scientist Presentation Award

04-19-2023

03-10-2023

IEEE EDTM2023 Best Contributed Paper Award
“High-Endurance (>1011cycles) and Thermally-Stable Sub-100nm TiO2 Channel FeFET for Low-Power Memory Centric 3D-LSI Applications”

02-17-2023

11-25-2022

Local Commendation for Invention of Chubu “The Prize of Mie Prefectural Governor”
“Surface Treatment Method for Semiconductor Device with Fine Patterns” (patent no 5855310)

06-30-2022

06-14-2022

2021 VLSI Test of Time Award
“Bit Cost Scalable Technology with Punch and Plug Process for Ultra High DensityFlash Memory,”

06-09-2022

2021 IEICE Achievement Award
“Massively Parallel and Distributed Processing 3D Electromagnetic Field Analysis and Design Optimization Method Using Implicit Method in Limited Direction” Jointly awarded with Shizuoka University

02-23-2022

12-14-2021

11-12-2021

Local Commendation for Invention of Kanto
The Prize of the Chairman of HATSUMEI KYOKAI (Japan Institute of Invention and Innovation JIII)
“Optimizing the Number of Reads in Multi-level Flash Memory” (patent no 4892307)

11-04-2021

AEC/APC Syposium Asia 2021 Best Paper Award
"Application of Contrastive Representation Learning to Unsupervised Defect Classification in Semiconductor Manufacturing"

09-07-2021

2021 International Conference on Solid State Devices and Materials (SSDM2021)
Young researcher Award “Marina Yamaguchi”

06-22-2021

06-16-2021

2020 VLSI Test of Time Award
"A NAND Structured Cell with a New Programming Technology for Highly Reliable 5 V-only Flash EEPROM,"

06-16-2021

2020 VLSI Test of Time Award
"A Quick Intelligent Program Architecture for 3 V-only NAND-EEPROMs,"

05-25-2021

04-09-2021

IEEE EDTM2021 Best Paper Award
”Cryogenic Operation of 3D Flash Memory for New Applications and Bit Cost Scaling with 6-Bit per Cell (HLC) and Beyond”

04-06-2021

The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology :
Prize for Science and Technology, Science and Technology Promotion Category “Development of high-speed and high-efficiency wireless LAN technology” Jointly awarded with Toshiba Corporation

09-24-2020

03-13-2020

18th JSAP Plasma Electronics Award

03-12-2020

APEX/JJAP Editorial Contribution Award from The Japan Society of Applied Physics

11-27-2019

The Sort Benchmark committee JouleSort World Record *1

11-19-2019

NANOTS2019 Best Interested Paper Award, Young Researcher's Encouragement Award

11-13-2019

AEC/APC Symposium Asia 2019 Best Paper Award
"Robust Estimation of Mixed-Type Wafer Map Similarity Utilizing Non-negative Matrix Factorization"

11-05-2019

A-SSCC Outstanding Contribution Award

09-18-2019

The 13th (2019) JSAP Fellow Award

03-10-2019

17th JSAP Plasma Electronics Award

03-09-2019

JSAP Young Scientist Presentation Award

02-19-2019

IEEE SSCS Japan Industry Contribution Award

01-17-2019

20th JSPS Plasma Science for Materials Award

  1. As of Nov. 27, 2019 (1TB Sort/89kJoules)

11-13-2018

DPS2018 Nishizawa Award

10-27-2018

Special Jury Award of the 2018 Incentive Award to Young Woman Engineer from Japan Women Engineers Forum (JWEF)

09-18-2018

The 12th (2018) JSAP Fellow Award

09-11-2018

Connect Products and Services category in the field of Business Impact of the 6th Cloudera Data Impact Awards

06-06-2018

Award for Excellence of the 24th Semiconductor of the Year 2018 in the field of semiconductor devices from Electronic Device Industry News

11-22-2017

IWDTF Young Award

11-16-2017

DPS2017 DPS Paper Award

11-10-2017

NANOTS2017 Best Interested Paper Award

08-04-2017

70th (2016): Technological Development Encouragement Prize from the Motion Picture and Television Engineering Society of Japan, Inc.

06-26-2017

Gold Prize of the 2016 Field Innovation Award from the Japanese Society for Artificial Intelligence (JSAI)

04-28-2017

Technical Development Prize (Progress & Development Prize) in the field of R&D of the 44th (2016) Technology Development Award from the Institute of Image Information and Television Engineers

03-24-2017

63rd (2016) Okochi Memorial Prize from the Okochi Memorial Foundation

02-14-2017

The Minister of Economy, Trade and Industry Prize of the 5th Management of Technology (MOT) & Innovation Award from Japan Techno-Economics Society (JATES)

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Research papers (Conference Presentation and Publication List)

All authors at submission are basically our company's employees. Written in English.

Flash Memory and Its Manufacturing Technology for Sustainable World
Author(s): K. Ishimaru, et al.
Journal title/Conference name: IEEE Journal of the Electron Devices Society, 10,pp. 737-743

Real-Time and Atomic-Scale Observation of Local Solid-Phase Epitaxial Growth in Thin Silicon Film
Author(s): M. Tezura, et al.
Journal title/Conference name: 2022 International Conference on Solid State Devices and Materials, E-2-07L

Variability-Controlled HfZrO2 Ferroelectric Tunnel Junctions for Reservoir Computing
Author(s): K. Ota, et al.
Journal title/Conference name: IEEE Transactions on Electron Devices, 69(12),pp. 7089-7095

Analysis of formation mechanism of deposited film in a high-aspect-ratio hole during dry etching using fluorocarbon gas plasmas
Author(s): N. Hiwasa, et al.
Journal title/Conference name: Applied Physics Express, 15(10),106002

Nanoscale observation of subgap excitations in β-Si3N4with a high refractive index using low-voltage monochromated STEM: A new approach to analyze the physical properties of defects in dielectric materials
Author(s): T. Asano, et al.
Journal title/Conference name: Applied Physics Express, 15(7),76501

Adhesion mechanism between mold resin and sputtered copper for electromagnetic wave shield packages
Author(s): S. Homma, et al.
Journal title/Conference name: Thin Solid Films, 750,139188

TCAD simulation for capture/emission of carriers by traps in SiN: Trap-Assisted tunneling model extended for capture of carriers injected via Fowler-Nordheim tunneling
Author(s): M. Hogyoku, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 61(SC),SC1087

A 25.6-Gb/s Interface Employing PAM-4-Based Four-Channel Multiplexing and Cascaded Clock and Data Recovery Circuits in Ring Topology for High-Bandwidth and Large-Capacity Storage Systems
Author(s): T. Toi, et al.
Journal title/Conference name: IEEE Journal of Solid-State Circuits, 57(5),pp. 1517-1526

Revisiting a kNN-Based Image Classification System with High-Capacity Storage
Author(s): K. Nakata, et al.
Journal title/Conference name: Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), 13697 LNCS,pp. 457-474

A 56-Gb/s PAM4 Transceiver with False-Lock-Aware Locking Scheme for Mueller-Muller CDR
Author(s): F. Tachibana, et al.
Journal title/Conference name: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings, ,pp. 505-508

Mechanism of HfO2-FeFET Memory Operation Revealed by Quantitative Analysis of Spontaneous Polarization and Trap Charge
Author(s): R. Ichihara, et al.
Journal title/Conference name: 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

Improvement of Line-to-line TDDB by Cu and Barrier-metal Recess Structure for high voltage circuit in 3D Flash Memory
Author(s): M. Noda, et al.
Journal title/Conference name: 2022 IEEE International Interconnect Technology Conference, IITC 2022, ,pp. 45-47

Adhesion Mechanism between Mold Resin and Sputtered Stainless Steel Ground Films for Electromagnetic Wave Shield Packages
Author(s): S. Homma, et al.
Journal title/Conference name: Materials Transactions, 63(6),pp. 766-775

Optimal Cell Structure/Operation Design of 3D Semicircular Split-gate Cells for Ultra-high-density Flash Memory
Author(s): T. Morooka, et al.
Journal title/Conference name: Digest of Technical Papers - Symposium on VLSI Technology, 2022-June,pp. 308-309

Carrier profile mapping in a 3D Flash memory cell using scanning nonlinear dielectric microscopy
Author(s): J. Hirota, et al.
Journal title/Conference name: 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, ,pp. 375-377

Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation
Author(s): H. Tanaka, et al.
Journal title/Conference name: 2022 IEEE International Memory Workshop, IMW 2022 - Proceedings

Advanced underlayer film to enhance the productivity of nanoimprint lithography
Author(s): K. Okabe, et al.
Journal title/Conference name: Journal of Micro/Nanopatterning, Materials and Metrology, 21(1),11006

Improvement of productivity by spin-coating and flash imprint lithography
Author(s): T. Iwasaki, et al.
Journal title/Conference name: Journal of Micro/Nanopatterning, Materials and Metrology, 21(1),11008

Multi-field imprint technology: enabling the productivity enhancement of nano-imprint lithography
Author(s): T. Nakasugi, et al.
Journal title/Conference name: Journal of Micro/Nanopatterning, Materials and Metrology, 21(1),11002

High thermal stability of doped oxide semiconductor for monolithic 3D integration
Author(s): H. Kawai, et al.
Journal title/Conference name: MRS Bulletin, 46(11),pp. 1044-1052

Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO-Based Ferroelectric FET
Author(s): Y. Higashi, et al.
Journal title/Conference name: IEEE Transactions on Electron Devices, 68(9),9493749,pp. 4391-4396

Quality-Oriented Statistical Process Control Utilizing Bayesian Modeling
Author(s): K. Date, et al.
Journal title/Conference name: IEEE Transactions on Semiconductor Manufacturing, 34(3),9406895,pp. 307-311

Performance Evaluation of a Blockchain-based Content Distribution over Wireless Mesh Networks
Author(s): Y. Ohba, et al.
Journal title/Conference name: 7th IEEE World Forum on Internet of Things, WF-IoT 2021, ,pp. 258-263

Decision system for plural production lines layout by using ga
Author(s): H. Yamamoto, et al.
Journal title/Conference name: Journal of Robotics, Networking and Artificial Life, 8(1),pp. 33-36

Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4
Author(s): D. Iino, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 60(5),50904

Cyclic C4F8 and O2 plasma etching of TiO2 for high-aspect-ratio three-dimensional devices
Author(s): T. Imamura, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 60(3),35502

InDepth: Force-based Interaction with Objects beyond A Physical Barrier
Author(s): T. Yoshida, et al.
Journal title/Conference name: TEI 2021 - Proceedings of the 15th International Conference on Tangible, Embedded, and Embodied Interaction, 42

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology
Author(s): T. Higuchi, et al.
Journal title/Conference name: Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 64,9366003,pp. 428-430

Foreword: Mechanistic understanding of cold atmospheric plasma applications
Author(s): K. Kurihara, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 60(2),20401

Source/Drain Contact Engineering of InGaZnO Channel BEOL Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect
Author(s): Y. Sato, et al.
Journal title/Conference name: 20th International Workshop on Junction Technology, IWJT 2021

Analysis and Optimization of Defect Generation Due to Mechanical Stress in High-Density SRAM
Author(s): K. Ishimaru, et al.
Journal title/Conference name: IEEE Journal of the Electron Devices Society, 9,pp. 1103-1109

Self-aligned double patterning process for sub-15nm nanoimprint template fabrication
Author(s): Y. Kagawa, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 11908,119080D

A 40 nm gate length surrounding gate vertical-channel fet using thermally stable in-al-zn-o channel for 3d cmos-lsi applications
Author(s): Y. Sato, et al.
Journal title/Conference name: Digest of Technical Papers - SID International Symposium, 52(1),pp. 61-64

Adaptive quantization method for CNN with computational-complexity-aware regularization
Author(s): K. Nakata, et al.
Journal title/Conference name: Proceedings - IEEE International Symposium on Circuits and Systems, 2021-May,9401657

A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to Improve the Random Read Latency with tProg = 75 μs and tR = 4 μs
Author(s): T. Kouchi, et al.
Journal title/Conference name: IEEE Journal of Solid-State Circuits, 56(1),9234438,pp. 225-234

Accurate Picture of Cycling Degradation in HfO2-FeFET Based on Charge Trapping Dynamics Revealed by Fast Charge Centroid Analysis
Author(s): R. Ichihara, et al.
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2021-December, pp. 130-133

History and Evolution of NAND Flash Memory (Plenary)
Author(s): Masaki Momodomi
Journal title/Conference name: 2021 International Conference on Solid State Devices and Materials (SSDM2021), B-5-01

Hafnia-based Ferroelectric Tunnel Junction for Emerging Applications (Invited)
Author(s): S. Fujii, et al.
Journal title/Conference name: 2021 International Conference on Solid State Devices and Materials (SSDM2021), B-5-01

Cryogenic Operation of 3-D Flash Memory for Storage Performance Improvement and Bit Cost Scaling
Author(s): T. Sanuki, et al.
Journal title/Conference name: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 7(2), pp. 159-167

Application of Contrastive Representation Learning to Unsupervised Defect Classification in Semiconductor Manufacturing
Author(s): S. Muzukami, et al.
Journal title/Conference name: AEC/APC Symposium Asia 2021, TDA-014

Distribution of trace impurities in microvolumes and analysis of concentration using laser sputtered neutral mass spectrometry
Author(s): H. Akutsu, et al.
Journal title/Conference name: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 39(6),064002

A noise-canceling charge pump for area efficient PLL design
Author(s): G. Urakawa, et al.
Journal title/Conference name: IEICE Transactions on Electronics, E104.C(10), pp. 625-634

Quantization Strategy for Pareto-optimally Low-cost and Accurate CNN
Author(s): K. Nakata, et al.
Journal title/Conference name: 2021 IEEE 3rd International Conference on Artificial Intelligence Circuits and Systems, AICAS 2021, 9458452

Advanced underlayer film to enhance the productivity of nanoimprint lithography
Author(s): K.Okabe, et al.
Journal title/Conference name: Journal of Micro/Nanopatterning, Materials, and Metrology 21(1), 011006

Current Status and Issues of In-memory Accelerators for Deep Neural Networks
Author(s): J. Deguchi
Journal title/Conference name: 2021 International Symposium on VLSI Design, Automation and Test (VLSI-DAT) (Invited)

Approaching DRAM performance by using microsecond-latency flash memory for small-sized random read accesses: a new access method and its graph applications
Author(s): T. Suzuki, et al.
Journal title/Conference name: Proceedings of the VLDB Endowment, 14(8), pp. 1311 – 1324

Metal diffusion model in polymer matrices in vapor phase infiltration
Author(s): N. Sasao, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 60,SCCC04

Applications of AI Technologies in Flash Memory Business
Author(s): R. Orihara
Journal title/Conference name: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, 9421020

Cryogenic Operation of 3D Flash Memory for New Applications and Bit Cost Scaling with 6-Bit per Cell (HLC) and beyond
Author(s): Y Aiba, et al.
Journal title/Conference name: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, 9421051

Challenges of Flash Memory for Next Decade (Invited)
Author(s): K. Ishimaru
Journal title/Conference name: IEEE International Reliability Physics Symposium Proceedings, 2021-March,9405182

In-line schematic failure analysis technique by defect SEM images
Author(s): J. Okude, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 11611,116110M

Measurability analysis of the HAR structure in 3D memory by T-SAXS simulation
Author(s): K. Sasaki, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 11611,116110U

Preventing method of volume expansion of polymer after metal infiltration
Author(s): N. Sasao, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 11612,1161209

Multi-field imprint technology: Enabling the productivity enhancement of NIL
Author(s): T. Nakasugi, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 11610,1161008

Quality-Oriented Statistical Process Control Utilizing Bayesian Modeling
Author(s): K. Date, et al.
Journal title/Conference name: IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, 2020-December,9377496

HfO2-based FeFET and FTJ for ferroelectric-memory centric 3D LSI towards low-power and high-density storage and AI applications (Invited)
Author(s): M. Saitoh, et al.
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2020-December,9372106, pp. 18.1.1-18.1.4

Design principle of channel material for oxide-semiconductor field-effect transistor with high thermal stability and high on-current by fluorine doping
Author(s): H. Kawai, et al.
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2020-December,9372121, pp. 22.2.1-22.2.4

Surrounding Gate Vertical-Channel FET with a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Author(s): H. Fujiwara, et al.
Journal title/Conference name: IEEE Transactions on Electron Devices, 67(12),9199412, pp. 5329-5335

An Effective Learning Scheme for Weighted-BP with Parallel Permutation Decoding
Author(s): R. Yoshizawa, et al.
Journal title/Conference name: Proceedings of 2020 International Symposium on Information Theory and its Applications, ISITA 2020, 9366111, pp. 86-90

A Noise-Canceling Charge Pump for Area Efficient PLL Design
Author(s): G. Urakawa, et al.
Journal title/Conference name: 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, 9226191, pp. 31-33

4-port 10 MHz-67 GHz Broadband Measurement of FR-4 PCB Transmission Lines for 64-Gb/s PAM-4 Signaling
Author(s): Y. Tsubouchi, et al.
Journal title/Conference name: 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, 9226185, pp. 7-9

Empowering Next-Generation Applications through FLASH Innovation (Plenary)
Author(s): S. J. Ohshima
Journal title/Conference name: Digest of Technical Papers - Symposium on VLSI Technology, 2020-June,9265031

Impact of Zr Concentration on Time-Dependent Dielectric Breakdown of HfZrO-based Ferroelectric Tunnel Junction (FTJ) Memory
Author(s): M. Yamaguchi, et al.
Journal title/Conference name: 2020 International Conference on Solid State Devices and Materials (SSDM2020), B-2-01

New Material Approach to Enhance Spontaneous Polarization in Ferroelectric HfO2
Author(s): K. Takahash, et al.
Journal title/Conference name: 2020 International Conference on Solid State Devices and Materials (SSDM2020), B-2-03

Suppression of Channel Shortening and Reduction of S/D Parasitic Resistance in InGaZnO channel BEOL Transistor by Insertion of thermally stable InAlZnO Contact Layer
Author(s): Y. Sato, et al.
Journal title/Conference name: 2020 International Conference on Solid State Devices and Materials (SSDM2020), J-6-02

Improved state stability of HfO2 ferroelectric tunnel junction by template-induced crystallization and remote scavenging for efficient in-memory reinforcement learning
Author(s): S. Fujii, et al.
Journal title/Conference name: Digest of Technical Papers - Symposium on VLSI Technology, 2020-June,9265031

Re-examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation
Author(s): R. Ichihara, et al.
Journal title/Conference name: Digest of Technical Papers - Symposium on VLSI Technology, 2020-June,9265055

Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm Using BEOL Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Author(s): H. Fujiwara, et al.
Journal title/Conference name: Digest of Technical Papers - Symposium on VLSI Technology, 2020-June,9265109

Combination of Transistors' compact model and Big Data for successful Smart Factory
Author(s): S. Yoshitomi.
Journal title/Conference name: 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 – Proceedings, 9262981

Polymer Designs for Dense Metal Infiltration for Higher Dry-etch Resistance
Author(s): N. Sasao, et. al.
Journal title/Conference name: Japanese Journal of Applied Physics 59(SI),SIIC02

Template development for sub15nm nanoimprint lithography
Author(s): R. Seki, et al.
Journal title/Conference name: Proc. SPIE. 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology; 111780S (2020)

A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory
Author(s): N. Kariya, et al.
Journal title/Conference name: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Weight compression MAC accelerator for effective inference of deep learning
Author(s): A. Maki, et al.
Journal title/Conference name: IEICE Transactions on Electronics, E103C(10), pp. 514-523

Experimental Extraction of Impact of Depletion Capacitance on Low Frequency Noise in Sub-Micron nMOSFETs with Reverse Body Bias
Author(s): C. Tanaka, et al.
Journal title/Conference name: IEEE Transactions on Semiconductor Manufacturing, 33(2),9050647, pp. 146-149

Novel Statistical Modeling and Parameter Extraction Methodology of Cutoff Frequency for RF-MOSFETs
Author(s): C. Tanaka, et al.
Journal title/Conference name: IEEE International Conference on Microelectronic Test Structures, 2020-May,9107914

Thyristor Operation for High Speed Read/Program Performance in 3D Flash Memory with Highly Stacked WL-Layers
Author(s): H. Horii, et al.
Journal title/Conference name: 2020 IEEE International Memory Workshop, IMW 2020 – Proceedings, 9108147

Emerging Usage and Evaluation of Low Latency FLASH
Author(s): T. Shiozawa, et al.
Journal title/Conference name: 2020 IEEE International Memory Workshop, IMW 2020 – Proceedings, 9108145

Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning
Author(s): M. Yamaguchi, et al.
Journal title/Conference name: IEEE International Reliability Physics Symposium Proceedings, 2020-April, 9129314

Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation
Author(s): H. Seki, et al.
Journal title/Conference name: IEEE International Reliability Physics Symposium Proceedings, 2020-April,9128224

Experimental Extraction of Impact of Depletion Capacitance on Low Frequency Noise in Sub-Micron nMOSFETs with Reverse Body Bias
Author(s): C. Tanaka, et al.
Journal title/Conference name: IEEE Transactions on Semiconductor Manufacturing, 33(2),9050647, pp. 146-149

Ab initio calculation of interlayer exchange coupling in Co-based synthetic antiferromagnet with alloy spacer
Author(s): R. Takashima, et al.
Journal title/Conference name: AIP Advances, 10(1),015324

Process technologies leading a future of semiconductor memory (KIOKU) devices (Plenary)
Author(s): K. Hashimoto
Journal title/Conference name: SPIE advanced lithography 2020, Technical Program pp.6-7, 11323-501

Formation of High Reliability Hydrogen-free MONOS Cells Using Deuterated Ammonia
Author(s): M. Noguchi, et al.
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2019-December,8993586

Can in-memory/analog accelerators be a silver bullet for energy-efficient inference?
Author(s): J. Deguchi, et al.
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2019-December,8993500

Future of Non-Volatile Memory -From Storage to Computing- (Plenary)
Author(s): K. Ishimaru
Journal title/Conference name: Technical Digest - International Electron Devices Meeting, IEDM, 2019-December,8993609

High-Efficient Adaptive Modulation for PWM-Based Multi-Level Perpendicular Magnetic Recording on Insufficient Resolution Channel
Author(s): K. Harada
Journal title/Conference name: IEEE Transactions on Magnetics, 55(11),8784414

Multi-Level Modulation for High-Speed Wireless and Wireline Transceivers
Author(s): R. Fujimoto
Journal title/Conference name: 2019 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2019 – Proceedings, 8929137

A perspective on NVRAM technology for future computing system
Author(s): K. Hoya, et al.
Journal title/Conference name: 2019 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2019, 8741675

Novel cleaning technology for nanoparticle removal
Author(s): M. Tanabe, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 11148,111480N

Capability of DUV inspection for the LWR improved EUV mask of sub-15 nm hp on wafer
Author(s): M. Naka, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 11148,111480X

Low Operation Current Cell Technology for Terabit-Scale Memory Applications (Invited)
Author(s): M. Saitoh, et al.
Journal title/Conference name: Non-Volatile Memory Technology Symposium 2019 (NVMTS2019), pp.98-99

Current-Induced Domain Wall Motion in Pd-based Multilayered Structures with Different Ferromagnetic Layer Composition
Author(s): M. Kado, et al.
Journal title/Conference name: 64th Annual Conference on Magnetism and Magnetic Materials (MMM2019), HB-03

Robust Estimation of Mixed Type Wafer Map Similarity Utilizing Non negative Matrix
Author(s): Y. Tanaka, et al
Journal title/Conference name: Proceedings of AEC/APC Symposium Asia 2019, TDA-022.

High Performance In-Zn-O FET with High On-current and Ultralow (<10-20 A/μm) Off-state Leakage Current for Si CMOS BEOL Application
Author(s): N. Saito, et al.
Journal title/Conference name: AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings 8830602

Random Telegraph Noise after Hot Carrier Injection in Tri-gate Nanowire Transistor
Author(s): K. Ota, et al.
Journal title/Conference name: 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, 8731025, pp. 169-171

Multi-criteria hotspot detection using pattern classification
Author(s): K. Shiozawa, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 10962,109620T

Lithography hotspot candidate detection using coherence map
Author(s): T. Matsunawa, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 10962,109620Q

Half-pitch 14nm direct patterning with nanoimprint lithography
Author(s): T. Kono, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering, 10958,109580H

Tungsten/In-Sn-O stacked source/drain electrode structure of In-Ga-Zn-O thin-film transistor for low-contact resistance and suppressing channel shortening effect
Author(s): J. Kataoka, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 58(SB),SBBJ03

Next Generation Memory System in Data-centric Computing
Author(s): M. Takahashi, et al.
Journal title/Conference name: 2019 International Conference on Solid State Devices and Materials (SSDM2019), H-5-01 (Invited)

ReRAM Opportunities for In-Memory Computing
Author(s): K. Ota
Journal title/Conference name: 2019 International Conference on Solid State Devices and Materials (SSDM2019), Short Course A-04

Advanced Plasma Etching for the State-of-the-Arts Memories
Author(s): H. Hayashi, et al.
Journal title/Conference name: 2019 International Conference on Solid State Devices and Materials (SSDM2019), Satellite Workshop SW-03

Experimental Extraction of Body Bias Dependence of Low Frequency Noise in sub-micron MOSFETs from Subthreshold to Moderate Inversion Regime
Author(s): C. Tanaka, et. al.
Journal title/Conference name: IEEE International Conference on Microelectronic Test Structures, ICMTS-2019, 8730953, pp. 162-165

Post Training Weight Compression with Distribution-based Filter-wise Quantization Step
Author(s): S. Sasaki, et al.
Journal title/Conference name: IEEE Symposium on Low-Power and High-Speed Chips and Systems, COOL CHIPS 2019 - Proceedings 8721356

Ag Ionic Memory Cell Technology for Terabit-Scale High-Density Application
Author(s): S. Fujii, et al.
Journal title/Conference name: IEEE Symposium on VLSI Technology, Digest of Technical Papers, pp. TT189-TT190

Overview in Three-Dimensionally Arrayed Flash Memory Technology
Author(s): R. Katsumata
Journal title/Conference name: IEEE Symposia on VLSI Technology and Circuits, Short Course 1

A 12.8-Gb/s Daisy Chain-Based Downlink I/F Employing Spectrally Compressed Multi-Band Multiplexing for High-Bandwidth, Large-Capacity Storage Systems
Author(s): Y. Tsubouchi, et al.
Journal title/Conference name: IEEE Journal of Solid-State Circuits, 54(4),8613011, pp. 1086-1095

Live demonstration: FPGA-based CNN accelerator with filter-wise-optimized bit precision
Author(s): K. Nakata, et al.
Journal title/Conference name: Proceedings - IEEE International Symposium on Circuits and Systems, 2019-May, 8702208

Circuit-size reduction for parallel chien search using minimal polynomial degree reduction
Author(s): N. Kokubun, et al.
Journal title/Conference name: Proceedings - IEEE International Symposium on Circuits and Systems, 2019-May, 8702075

Grain-boundary-limited carrier mobility in polycrystalline silicon with negative temperature dependence: Modeling carrier conduction through grain-boundary traps based on trap-assisted tunneling
Author(s): M. Hogyoku, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 58(SB), SBBA01

Comprehensive study of variability in poly-Si channel nanowire transistor
Author(s): K. Ota, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 58(SB), SBBA06

Evaluation of electron traps in SiNx by discharge current transient spectroscopy: Verification of validity by comparing with conventional DLTS
Author(s): H. Seki, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 58(SB), SBBK02

High mobility (>30 cm2 V-1 s-1) and low source/drain parasitic resistance In-Zn-O BEOL transistor with ultralow <10-20 A μm-1 off-state leakage current
Author(s): N. Saito, et al.
Journal title/Conference name: Japanese Journal of Applied Physics, 58(SB), SBBJ07

Investigation of Switching-Induced Local Defects in Oxide-Based CBRAM Using Expanded Analytical Model of TDDB
Author(s): R. Ichihara, et al.
Journal title/Conference name: IEEE Transactions on Electron Devices, 66(5), 8676360, pp. 2165-2171

A 25.6Gb/s Uplink-Downlink Interface Employing PAM-4-Based 4-Channel Multiplexing and Cascaded CDR Circuits in Ring Topology for High-Bandwidth and Large-Capacity Storage Systems
Author(s): T. Toi, et al.
Journal title/Conference name: Digest of Technical Papers - IEEE International Solid-State Circuits Conference, pp. 478 - 480

Device Challenges and Opportunities for ReRAM
Author(s): K. Ota
Journal title/Conference name: IEEE International Reliability Physics Symposium, IRPS 2019 - Tutorial

3D Flash Memory - Electrical and Physical Characterizations for Memory Cell Reliability -
Author(s): Y. Mitani
Journal title/Conference name: IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Tutorial

Improving thickness uniformity of sputter-deposited films by using magnet rotation speed control technique
Author(s): T. Miura, et al.
Journal title/Conference name: IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, 2018-December, 8651152

Fixed charge control of silylated surface for stiction-free drying with surface energy reduction process
Author(s): T. Koide, et al.
Journal title/Conference name: Solid State Phenomena, 282 SSP, pp. 168-174

Deep Learning in DFM Applications
Author(s): T. Matsunawa, et. al.
Journal title/Conference name: Proceedings Volume 10810, Photomask Technology 2018; 1081006

FPGA-Based CNN Processor with Filter-Wise-Optimized Bit Precision
Author(s): A. Maki, et al.
Journal title/Conference name: Proceedings of 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC2018) pp.47-50

Non-Volatile Memory for Data Age (Invited)
Author(s): K. Ishimaru
Journal title/Conference name: Proceedings of the International Conference on Solid-State and Integrated Technology 2018 (ICSICT-2018) pp. 1215-1218

Formation Mechanism of Sidewall Striation in High-Aspect-Ratio Hole Etching
Author(s): M. Omura, et al.
Journal title/Conference name: 40th International Symposium on Dry Process (DPS2018), H-2, pp. 293-294

Footprints of RF CMOS Compact Modeling Technology from Wireless Communication to IoT Applications
Author(s): S. Yoshitomi
Journal title/Conference name: Proceedings of 25th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2018, 8436911, pp. 22-28

Evaluation of Electron Traps in SiN by Discharging Current Transient Spectroscopy: Verification of Validity by Comparing with Conventional DLTS
Author(s): H. Seki, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.325-326

High mobility (>30 cm2/Vs) and Low S/D Parasitic Resistance In-Zn-O BEOL Transistor with Ultralow (<10-20 A/μm) Off Leakage Current
Author(s): N. Saito, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.573-574

Performance improvement by template-induced crystallization in ferroelectric HfO2 tunnel junction memory for cross-point high-density application
Author(s): S. Kabuyanagi, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.205-206

Effect of Tin and Gallium Composition on the Instability of Amorphous Indium-Gallium-Zinc-Tin-Oxide (IGZTO) Thin-Film Transistors under Positive Gate Bias
Author(s): D. Zhao, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.805-806 (Late News)

Grain-Boundary-Limited Polycrystalline-Silicon Mobility with Negative Temperature Dependence ~ Modeling of Carrier Conduction through Grain-Boundary Traps Based on Trap-Assisted Tunneling ~
Author(s): M. Hogyoku, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp. 825-826

Stacked Source/Drain Electrode Structure of InGaZnO Thin-Film-Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect
Author(s): J. Kataoka, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.1269-1270 (Late News)

Comprehensive Study of Variability in Poly-Si Channel Nanowire Transistor ~ Grain Boundary effect in Variability ~
Author(s): K. Ota, et al.
Journal title/Conference name: 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.235-236 (Late News)

Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI (Invited)
Author(s): M. Saitoh, et al.
Journal title/Conference name: 48th European Solid-State Device Research Conference (ESSDERC) 2018, pp.138-141

Performance and Reliability of Ferroelectric HfO2 Tunnel Junction Memory (Invited)
Author(s): S. Fujii, et al.
Journal title/Conference name: 2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP2018)

Reliability of HfO2-based Ferroelectric Tunnel Junction Memory (Invited)
Author(s): M. Yamaguchi, et al.
Journal title/Conference name: Non-Volatile Memory Technology Symposium 2018 (NVMTS2018)

A 12.8 Gb/s Daisy Chain-Based Downlink I/F Employing Spectrally Compressed Multi-Band Multiplexing for High-Bandwidth and Large-Capacity Storage Systems
Author(s): Y. Tsubouchi, et al.
Journal title/Conference name: IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. 149-150

Suppression of channel shortening effect for InGaZnO Thin-Film-Transistor by In-Sn-O source/drain electrodes
Author(s): J. Kataoka, et al.
Journal title/Conference name: 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 8421427, pp. 175-177

Origin of High Mobility in InSnZnO MOSFETs
Author(s): N. Saito, et al.
Journal title/Conference name: 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 -Proceedings 8421530, pp. 172-174

3D Flash Memory for Data-Intensive Applications (Keynote)
Author(s): S. Inaba
Journal title/Conference name: 2018 IEEE 10th International Memory Workshop, IMW 2018 pp. 1-4

Comprehensive investigation on parameter extraction methodology for short channel amorphous-InGaZnO thin-film transistor
Author(s): C. Tanaka, et al.
Journal title/Conference name: IEEE International Conference on Microelectronic Test Structures 2018-March, pp. 23-26

Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching
Author(s): T. Ichikawa, et al.
Journal title/Conference name: Japanese Journal of Applied Physics 57(6), 06JC01

Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
Author(s): Y. Miyano, et al.
Journal title/Conference name: Japanese Journal of Applied Physics 57(6), 06JB03

Hot carrier degradation, TDDB, and 1/f noise in Poly-Si Tri-gate nanowire transistor
Author(s): Y. Yoshimura, et al.
Journal title/Conference name: IEEE International Reliability Physics Symposium Proceedings 2018-March, pp. 5A.61-5A.66

Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO2 interface
Author(s): H. Kawai, et al.
Journal title/Conference name: Journal of Applied Physics 123(16), 161425

Charge-based Neuromorphic Cell by InGaZnO Transistor and Implementation of Simple Scheme Spike-Timing-Dependent Plasticity
Author(s): C. Tanaka, et al.
Journal title/Conference name: Proceedings - IEEE International Symposium on Circuits and Systems 2018-May, 8350932

Hotspot detection based on surrounding optical feature
Author(s): Y. Abe, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 10588, 105880I

Updates of nanoimprint lithography for production and applications for next generation memory devices
Author(s): T. Higashiki
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 10584, 105840T

Origin of high mobility in InSnZnO MOSFETs
Author(s): N. Saito, et al.
Journal title/Conference name: IEEE Journal of the Electron Devices Society 6,8546783, pp. 1258-1262

Study of CO2 ashing for porous SiOCH film using 100 MHz/13.56 MHz dual frequency superimposed capacitive coupled plasma
Author(s): T. Imamura, et al.
Journal title/Conference name: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics 35(6), 062201

Development of an Energy-Saving Controller for Sub Apparatus
Author(s): T. Ozaki
Journal title/Conference name: IEEE Transactions on Semiconductor Manufacturing 30(4), 8057857, pp. 367-370

Metrology and inspection required for next generation lithography
Author(s): M. Asano, et al.
Journal title/Conference name: Japanese Journal of Applied Physics 56(6), 06GA01

Application of EB repair for nanoimprint lithography template
Author(s): A, Kumada, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 10454, 104540Q

Accurate lithography simulation model based on convolutional neural networks
Author(s): Y. Watanabe, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 10454, 104540I

DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm
Author(s): M. Naka, et al.
Journal title/Conference name: Proceedings of SPIE - The International Society for Optical Engineering 10451, 104510K

Multi-scale modeling for SiO2 plasma-enhanced atomic layer deposition at high-aspect-ratio hole patterns
Author(s): Y. Miyano, et al.
Journal title/Conference name: 39th International Symposium on Dry Process (DPS2017), B-3, pp. 19-20

Introducing KIOXIA’s achievements in supporting the evolution of electric devices, such as the invention of NAND flash memory in 1987, and advancement of the information society on a global scale, seen through the lens of the history of memory and SSD development.