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Technology Topics
Introducing the latest technologies being researched and developed at KIOXIA Corporation and various use cases of flash memories.
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HfO2-FeFETs is a strong candidate for next-generation memory. In HfO2-FeFETs memory the difference between "0" and "1" decreases after repeated write and erase operations. This cycle degradation, which remained largely unknown, has been clarified by high-speed charge center analysis. This achievement is expected to advance the practical application of HfO2-FeFET memory. These results were presented at the international conference IEDM2021.
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Recently, ferroelectric memories using ferroelectric-HfO2 film have attracted much attention towards low-power and high-density in-memory computing for AI (artificial intelligence).
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The challenge for achieving terabit-scale cross-point memory is to reduce operation current of a memory cell.
As a solution, we focused on a new non-volatile memory; Ag ionic memory.
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We propose new memory cell technologies to realize even higher bit density file memories, as well as various high-speed nonvolatile memories.
R&D Organization
Conducts advanced research and development, application system development, and development prototyping in the field of memory including emerging memory
Conducts R&D on BiCS FLASH™, a type of 3D flash memory that KIOXIA was the first to develop in the world, while serving as a bridge between R&D and volume production.
KIOXIA memory and storage solutions enable the success of emerging applications and allow existing technologies to reach their expected potential.
Storage technologies and solutions that support the latest SSDs, such as software-defined solutions that share SSDs across security networks, are introduced.
KIOXIA has established industry-leading R&D frameworks with “memory” technology. We use our various locations to conduct technological innovation while promoting open innovation.
