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Introducing the latest technologies being researched and developed at KIOXIA Corporation and various use cases of flash memories.
We developed a recovery annealing technology applicable to 7-bit per cell flash memory operating at cryogenic temperatures. The technology can contribute to the realization of a sustainable society through future bit cost scaling and extended chip life.
We successfully demonstrated the world’s first 7-bit per cell by combining 77K cryogenic operation with silicon process technology that can improve memory cell characteristics.
September 28, 2021 Multi-level technology Institute of Memory Technology R&D (Device Technology)
With the growth of the quantum computing and high performance computing, there are increasing demands for the computer systems and electrical components that can operate at relatively low temperature. It has been reported that the characteristics of several types of semiconductor devices can be improved by cryogenic temperature. This report is the first to introduce a cryogenic operation and characteristics of 3D Flash memory at 77 K immerged in the liquid nitrogen.
Conducts advanced research and development, application system development, and development prototyping in the field of memory including emerging memory
Conducts R&D on BiCS FLASH™, a type of 3D flash memory that KIOXIA was the first to develop in the world, while serving as a bridge between R&D and volume production.