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Technology Topics
Introducing the latest technologies being researched and developed at KIOXIA Corporation and various use cases of flash memories.
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We achieved a large memory window in a 3D-FeFET with low-voltage operation after read disturbance, retention, and endurance through band engineering of the gate and channel side interfacial layers, as well as by controlling the stress on the ferroelectric layer.
R&D Organization
We aim to pursue continuous technological exploration and its social implementation to achieve an affluent and sustainable digitalized society through innovative memory technologies.
Conducts R&D on BiCS FLASH™, a type of 3D flash memory that KIOXIA was the first to develop in the world, while serving as a bridge between R&D and volume production.