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Technology Topics
Introducing the latest technologies being researched and developed at KIOXIA Corporation and various use cases of flash memories.
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It is well known that electrical resistivity in poly-crystalline metallic interconnects increases with downsizing their critical dimension. This is called as size effect on electrical resistivity. Additionally, an anisotropic property manifests itself in the size effect by single crystallization of metallic interconnects. We have successfully developed a numerical simulation technique to predict the anisotropic size effect on electrical resistivity in the single-crystalline metallic interconnects. This achievement was presented at the SSDM 2024.
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As the demand for larger memory capacities has rapidly increased, a high etch rate for a high aspect ratio structure is significantly required for high productivity. We have modeled ion-induce surface reactions and developed a simulation technique for predicting the optimal ion species for the etching process of the memory hole because ion species play a dominant role in high aspect ratio etching.
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Memory devices that require new materials and complex 3D structures.
R&D Organization
We aim to pursue continuous technological exploration and its social implementation to achieve an affluent and sustainable digitalized society through innovative memory technologies.
Conducts R&D on BiCS FLASH™, a type of 3D flash memory that KIOXIA was the first to develop in the world, while serving as a bridge between R&D and volume production.
KIOXIA memory and storage solutions enable the success of emerging applications and allow existing technologies to reach their expected potential.
Storage technologies and solutions that support the latest SSDs, such as software-defined solutions that share SSDs across security networks, are introduced.
KIOXIA has established industry-leading R&D frameworks with “memory” technology. We use our various locations to conduct technological innovation while promoting open innovation.
