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Memory devices that require new materials and complex 3D structures.
To start, we establish fundamental models of process phenomena and device operations. We apply computational science such as first-principle calculation for a thorough understanding of electron-level or atomic-level microscopic phenomena.
Then, we promptly build the process and device models into our in-house TCAD system, which realizes robust simulation.
We make great contributions to good prospects and efficient advanced memory development not only by finding solutions to the technical issues with the memories currently under development but also by predicting the performance and possible issues of future generation memories before starting fabrication.