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Introducing the latest technologies being researched and developed at KIOXIA Corporation and various use cases of flash memories.
OS-FET with both high thermal stability and high on-current can be realized by optimizing F amount in IGZO:F. These results are fundamental technologies to realize new memory devices with large amounts of storage, low latency, and ultralow-power consumption, which cannot be achieved by silicon-based FETs.
A challenge of OS-transistor development is improvement of its thermal stability. By using InGaZnO (IGZO) which is a conventional OS, the OS transistor does not work properly by thermal processes required in manufacturing process of the memory device.
In order to overcome this issue, we have newly proposed InAlZnO (IAZO) as an OS material with high thermal stability.
Conducts advanced research and development, application system development, and development prototyping in the field of memory including emerging memory
Conducts R&D on BiCS FLASH™, a type of 3D flash memory that KIOXIA was the first to develop in the world, while serving as a bridge between R&D and volume production.