Toshiba to Expand 3D Flash Memory Production Capacity by Building New Fabrication Facility at Yokkaichi

Will reinforce flash memory development by constructing Memory R&D center

  • November 8, 2016
  • Toshiba Corporation

TOKYO—Toshiba Corporation (TOKYO: 6502) today announced the outline schedule for the construction of a state-of-the-art fabrication facility at Yokkaichi Operations in Mie, Japan, for expanded production of BiCS FLASH™, its proprietary 3D Flash memory[1].

Following on from the March announcement of its intention to build a new BiCS FLASH™ facility, the company decided to start construction in February 2017. The new fab will be dedicated to 3D Flash memory processes. Like Fab 5, it will be constructed in two phases, to optimize the pace of investment against market trends, with completion of the first phase targeting summer 2018. Toshiba also plans to construct a new building adjacent to the new fab, the Memory R&D Center. This will bring together research development activities now carried out in different locations, a move that will promote flash memories development.

Decisions on the new fab’s overall capacity and equipment investment, the start of production, production capacity and production plan will reflect market trends. 

Toshiba expects to continue its joint investments in and operations of the flash joint venture based on discussion with Western Digital in the new facility.

The new fab will have a quake absorbing structure and an environmentally friendly design that includes LED lighting throughout the building, plus the latest energy saving manufacturing equipment. It will also introduce an advanced production system that uses artificial intelligence (AI) to boost productivity.

Going forward, Toshiba will expand its memory business and boost competitiveness by timely investments responding to market needs, and by development of BiCS FLASH™ and new generation memories.

[1]A structure that stack Flash memory cells on a silicon substrate. It realizes significant density improvements over planar NAND Flash memory, where cells are formed on the silicon substrate.

  • BiCS FLASH is a trademark of Toshiba Corporation.